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BS IEC 60747-2:2025 Semiconductor devices - Discrete devices. Rectifier diodes, 2025
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- CONTENTS
- FOREWORD
- 1 Scope
- 2 Normative references
- 3 Terms and definitions [Go to Page]
- 3.1 General
- 3.2 Voltages
- Figures [Go to Page]
- Figure 1 – Reverse voltage ratings
- 3.3 Currents
- Figure 2 – Forward current ratings
- 3.4 Power dissipation
- 3.5 Switching characteristics
- Figure 3 – Voltage waveform during forward recovery (Method I)
- Figure 4 – Voltage waveform during forward recovery (Method II)
- Figure 5 – Current waveform during reverse recovery
- Figure 6 – Voltage and current waveforms and recovered charge during reverse recovery
- 3.6 Mechanical ratings
- 4 Letter symbols [Go to Page]
- 4.1 General
- 4.2 List of letter symbols
- Tables [Go to Page]
- Table 1 – Voltages
- Table 2 – Currents
- Table 3 – Power dissipation
- 5 Essential ratings and characteristics [Go to Page]
- 5.1 General
- 5.2 Ratings (limiting values) [Go to Page]
- 5.2.1 Storage temperature (Tstg)
- 5.2.2 Operating ambient, case, heatsink or junction temperature (Ta, Tc, Ts or Tvj)
- 5.2.3 Non-repetitive peak reverse voltage (VRSM) (where appropriate)
- 5.2.4 Repetitive peak reverse voltage (VRRM)
- 5.2.5 Reverse voltage (VR) (where appropriate)
- Table 4 – Switching characteristics [Go to Page]
- 5.2.6 Forward currents
- 5.2.7 Peak case non-rupture current (IRSMC) (where appropriate)
- 5.2.8 Reverse power (for avalanche rectifier diodes)
- 5.2.9 Mechanical ratings
- 5.3 Characteristics [Go to Page]
- 5.3.1 Forward voltages
- 5.3.2 Breakdown voltage (V(BR)) (of avalanche rectifier diodes)
- 5.3.3 Reverse current (IR(D))
- 5.3.4 Repetitive peak reverse current (IRRM) (where appropriate)
- 5.3.5 Reverse recovery characteristics (where appropriate)
- Figure 7 – Recovered charge Qr, peak reverse recovery current Irrm, reverse recovery time trr (idealized characteristics) [Go to Page]
- 5.3.6 Forward recovery characteristics (where appropriate)
- 5.3.7 Thermal resistance (Rth)
- 5.3.8 Transient thermal impedance (Zth(t)) (where appropriate)
- 6 Measuring methods [Go to Page]
- 6.1 General
- 6.2 Verification of ratings (limiting values) [Go to Page]
- 6.2.1 Non-repetitive peak reverse voltage (VRSM)
- 6.2.2 Non-repetitive surge forward current (IFSM)
- Figure 8 – Circuit diagram for verification of non-repetitive peak reverse voltage
- Figure 9 – Circuit diagram for verification of non-repetitive surge forward current [Go to Page]
- 6.2.3 Repetitive peak reverse power (PRRM) or surge reverse power (PRSM) of avalanche rectifier diodes
- Figure 10 – Circuit diagram for verification of repetitive peak reverse power (PRRM) or surge reverse power (PRSM) of avalanche rectifier diodes
- Figure 11 – Triangular reverse current waveform
- Figure 12 – Sinusoidal reverse current waveform
- Figure 13 – Rectangular reverse current waveform
- Figure 14 – Verification of surge reverse power PRSM versus breakdown [Go to Page]
- 6.2.4 Peak case non-rupture current (IRSMC)
- Figure 15 – Circuit diagram for verification of peak case non-rupture current
- Figure 16 – Waveform of reverse current through diode
- 6.3 Measuring methods for electrical characteristics [Go to Page]
- 6.3.1 Forward voltage (VF)
- Figure 17 – Circuit diagram for measurement of forward voltage
- Figure 18 – Circuit diagram for measurement of average forward voltage and/or peak forward voltage (AC method)
- Figure 19 – Graphic representation of forward voltage versus current characteristic
- Figure 20 – Circuit diagram for measurement of peak forward voltage (pulse method) [Go to Page]
- 6.3.2 Breakdown voltage (V(BR)) of avalanche rectifier diodes
- Figure 21 – Circuit diagram for measurement of breakdown voltage [Go to Page]
- 6.3.3 Reverse current (IR)
- Figure 22 – Circuit diagram for measurement of reverse current [Go to Page]
- 6.3.4 Repetitive peak reverse current (IRRM)
- Figure 23 – Circuit diagram for measurement of peak reverse current [Go to Page]
- 6.3.5 Recovered charge (Qr), reverse recovery time (trr), reverse recovery energy (Err) and reverse recovery softness factor (Srr)
- Figure 24 – Circuit diagram for measurement of reverse recovery characteristics
- Figure 25 – Current waveform through diode during reverse recovery (half sinusoidal method)
- Figure 26 – Circuit diagram for measurement of reverse recovery characteristics (rectangular method)
- Figure 27 – Current waveform through diode during reverse recovery (rectangular method) [Go to Page]
- 6.3.6 Capacitive charge (QC)
- Figure 28 – Circuit diagram for measurement of capacitive charge [Go to Page]
- 6.3.7 Forward recovery time (tfr) and peak forward recovery voltage (Vfrm)
- Figure 29 – Circuit diagram for measurement of forward recovery
- Figure 30 – Current waveform during forward recovery
- Figure 31 – Voltage waveform during forward recovery
- 6.4 Measuring methods for thermal properties [Go to Page]
- 6.4.1 General
- 6.4.2 Thermal resistance (Rth) and transient thermal impedance (Zth(t))
- Figure 32 – Circuit diagram for measurement of thermal resistance and transient thermal impedance
- Figure 33 – Calibration curve showing typical variation of forward voltage at measuring current with case temperature (when heated from outside, i.e. Tc = Tvj)
- 7 Requirements for type tests, routine tests, endurance tests and marking [Go to Page]
- 7.1 Type tests
- 7.2 Routine tests
- 7.3 Endurance tests [Go to Page]
- 7.3.1 General
- 7.3.2 List of endurance tests
- 7.3.3 Conditions for endurance tests
- 7.3.4 Acceptance-defining characteristics and acceptance criteria for endurance tests
- Table 5 – Minimum type and routine tests for rectifier diodes
- Table 6 – Acceptance-defining characteristics for acceptance after endurance tests [Go to Page]
- 7.3.5 Acceptancedefining characteristics and acceptance criteria for reliability tests
- 7.4 Measuring and test methods
- 7.5 Marking
- Bibliography [Go to Page]
