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BS IEC 63601:2026 Guideline for evaluating bias temperature instability of silicon carbide metal-oxide-semiconductor devices for power electronic conversion >
BS IEC 63601:2026 Guideline for evaluating bias temperature instability of silicon carbide metal-oxide-semiconductor devices for power electronic conversion, 2026
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- CONTENTS
- FOREWORD
- INTRODUCTION
- 1 Scope
- 2 Normative references
- 3 Terms and definitions
- 4 Considerations for bias-temperature instability (BTI) stress methods and shift evaluation for SiC-based MOS devices [Go to Page]
- Figures [Go to Page]
- 5 General Measure Stress Measure (MSM) method
- Table 1 – BTI methods described in this document [Go to Page]
- 6 Fast Drain Current (FDC) method [Go to Page]
- 7 Gate sweep MSM method [Go to Page]
- 8 Conditioning Method [Go to Page]
- 9 Hysteresis method (or double sense method) [Go to Page]
- 10 Triple sense method [Go to Page]
- Annex A (informative) Supplemental sampling guidelines
- Annex B (informative) Examples demonstrating VT shift during BTI measurements [Go to Page]
- Annex C (informative) Examples demonstrating VT shift during gate switching [Go to Page]
- Annex D (informative) Lifetime models
- Annex E (informative) General introduction to threshold voltage (VT) stability and SiC-based MOS devices
- Bibliography [Go to Page]